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1 article(s) from Djeffal, Fayçal

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

Hichem Ferhati,
Fayçal Djeffal and
Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

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Figure 1: Schematic of the investigated DG-HJ-JL TFET with N_d = 1·10¹⁹ cm⁻³ and t_ox = 3 nm.

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Figure 2: Drain current as a function of the applied gate voltage for the DG-HJ-JL TFET proposed with differe...

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Figure 3: (a) Transfer characteristics of the proposed Si₁₋_xGe_x/Si/Ge DG-HJ-JL TFET as a function of the Ge c...

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Figure 4: (a) Subthreshold swing factor and the I_ON/I_OFF ratio as functions of the Ge mole fraction for the i...

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Figure 5: Subthreshold swing factor as a function of the channel length for both the proposed Si₁₋_xGe_x/Si/Ge ...

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Published 22 Jun 2018

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